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2SD1747A ISL41387 LN265RPH MC10E457 0TA17 1029B XB0932P 1N4700D
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  Datasheet File OCR Text:
 LAPT
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3284 150 150 5 14 3 125(Tc=25C) 150 -55 to +150
2SC3284
Application : Audio and General Purpose
(Ta=25C) 2SC3284 100max 100max 150min 50min 2.0max 60typ 200typ V pF
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)
(Ta=25C) Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=-2A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
4.0
V
a b
o3.20.1
MHz
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.5 IB2 (A) -0.5 ton (s) 0.2typ tstg (s) 1.5typ tf (s) 0.35typ
5.450.1 B C E
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
0m
400 mA
300 mA
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) 3
IC - V BE Temperature Characteristics (Typical)
14 (VCE=4V)
14
A 0m 60 mA 0 50
12
75
A
200m
Collector Current I C (A)
A
Collector Current I C( A)
15 0m A
10
2
8
10 0m A
em
as
12
C
5A 0 0
0
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
0
-30
25
1 Base-Emittor Voltage V B E( V)
C
IB=20mA
5C
IC=10A
(Ca
(C
se
4
eT
1
Tem
50mA
5
p)
p)
2
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
(V C E= 4V) 200 DC Curr ent Gain h F E DC Cur rent Gain h FE 200 125C 100 100
(V C E= 4V)
j- a( C/W)
h FE - IC Characteristics (Typical)
hFE - IC Temperature Characteristics (Typical)
j-a - t Characteristics
3
Transient Thermal Resistance
Typ
25C -30C
1 0.5
50
50
20 0.02
0.1
0.5
1
5
10 14
20 0.02
0.1
0.5
1
5
10 14
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(VCE=12V) 80 40
Safe Operating Area (Single Pulse)
130
1m
10
P c - T a Derating
s
Cut-o ff F reque ncy f T( MH Z)
Typ
60 Collector Curren t I C( A) 10 5
10
s
0m
Maxim um Power Di ssip ation P C( W)
m
D
s
100
W ith
C
In fin ite he
40
at si nk
50
1 0.5 Without Heatsink Natural Cooling
20
0 -0.02
-0.1
-1
-10
0.2 3 10 100 200 Emitter Current I E( A) Collector-Emitter Voltage V C E( V)
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Ambient Temperature Ta(C)
65


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